Black silicon: fabrication methods, properties and solar energy applications

X Liu, PR Coxon, M Peters, B Hoex, JM Cole… - Energy & …, 2014 - pubs.rsc.org
Black silicon (BSi) represents a very active research area in renewable energy materials.
The rise of BSi as a focus of study for its fundamental properties and potentially lucrative …

Recent advancements in carrier-selective contacts for high-efficiency crystalline silicon solar cells: Industrially evolving approach

KWA Chee, BK Ghosh, I Saad, Y Hong, QH **a, P Gao… - Nano Energy, 2022 - Elsevier
Carrier-selective crystalline silicon heterojunction (SHJ) solar cells have already reached
superior lab-scale efficiencies. Besides judicious wafer thickness design, the optimal choice …

Titanium oxide: A re-emerging optical and passivating material for silicon solar cells

J Cui, T Allen, Y Wan, J Mckeon, C Samundsett… - Solar Energy Materials …, 2016 - Elsevier
We demonstrate effective passivation of a variety of crystalline silicon (c-Si) surfaces by a
thin layer of thermal atomic layer deposited (ALD) titanium oxide (TiO 2). Surface …

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

RS Bonilla, I Al-Dhahir, M Yu, P Hamer… - Solar Energy Materials …, 2020 - Elsevier
Abstract The Si–SiO 2 interface has and will continue to play a major role in the
development of silicon photovoltaic devices. This work presents a detailed examination of …

Low-temperature plasma processing for Si photovoltaics

SQ **ao, S Xu, K Ostrikov - Materials Science and Engineering: R: Reports, 2014 - Elsevier
There has been a recent rapid expansion of the range of applications of low-temperature
plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si …

[КНИГА][B] New perspectives on surface passivation: Understanding the Si-Al2O3 interface

LE Black - 2016 - books.google.com
The book addresses the problem of passivation at the surface of crystalline silicon solar
cells. More specifically, it reports on a high-throughput, industrially compatible deposition …

Passivation of boron-doped industrial silicon emitters by thermal atomic layer deposited titanium oxide

B Liao, B Hoex, KD Shetty, PK Basu… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
Passivation of p+-doped silicon is demonstrated by using water (H 2 O)-based thermal
atomic layer-deposited titanium oxide (TiO x) films. Emitter saturation current density (J 0 e) …

Effect of boron concentration on recombination at the p-Si–Al2O3 interface

LE Black, T Allen, KR McIntosh, A Cuevas - Journal of Applied Physics, 2014 - pubs.aip.org
We examine the surface passivation properties of Al 2 O 3 deposited on boron-doped
planar⟨ 100⟩ crystalline silicon surfaces as a function of the boron concentration. Both …

~ 23% rear side poly-Si/SiO2 passivated silicon solar cell with optimized ion-implanted boron emitter and screen-printed contacts

YY Huang, YW Ok, K Madani, W Choi… - Solar Energy Materials …, 2021 - Elsevier
We report on the understanding and optimization of ion-implanted boron emitters in
combination with screen-printed contacts to produce very low recombination current density …

Tube‐type plasma‐enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies> 24%

B Liao, X Wu, W Wu, C Liu, S Ma… - Progress in …, 2023 - Wiley Online Library
In this work, single‐side aluminum oxide (Al2O3) deposition enabled by a new tube‐type
industrial plasma‐assisted atomic layer deposition (PEALD) technique is presented to meet …