Modeling electronic and optical properties of III–V quantum dots—selected recent developments

A Mittelstädt, A Schliwa, P Klenovský - Light: Science & Applications, 2022 - nature.com
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …

Size effect of band gap in semiconductor nanocrystals and nanostructures from density functional theory within HSE06

BJ Abdullah - Materials Science in Semiconductor Processing, 2022 - Elsevier
A new approach has been studied to determine the band gap energy based on the density
functional theory using the hybrid functional (HSE06) with the modeled lattice expansion of …

Unified theory of direct or indirect band-gap nature of conventional semiconductors

LD Yuan, HX Deng, SS Li, SH Wei, JW Luo - Physical Review B, 2018 - APS
Although the direct or indirect nature of the band-gap transition is an essential parameter of
semiconductors for optoelectronic applications, the reasons for why some of the …

Machine-learned approximations to density functional theory hamiltonians

G Hegde, RC Bowen - Scientific reports, 2017 - nature.com
Abstract Large scale Density Functional Theory (DFT) based electronic structure
calculations are highly time consuming and scale poorly with system size. While semi …

Automated construction of symmetrized Wannier-like tight-binding models from ab initio calculations

D Gresch, QS Wu, GW Winkler, R Häuselmann… - Physical Review …, 2018 - APS
Wannier tight-binding models are effective models constructed from first-principles
calculations. As such, they bridge a gap between the accuracy of first-principles calculations …

Thickness engineered tunnel field-effect transistors based on phosphorene

FW Chen, H Ilatikhameneh, TA Ameen… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high-performance
ultra-scaled steep transistor is proposed. This device exploits a specific property of 2-D …

The impact of spin–orbit coupling and the strain effect on monolayer tin carbide

MR Islam, Z Wang, S Qu, K Liu, Z Wang - Journal of Computational …, 2021 - Springer
Two-dimensional tin carbide (2D-SnC) has attracted intensive attention from researchers
recently due to its superior properties. We focus herein on the impact of the effects of spin …

Digital alloy InAlAs avalanche photodiodes

J Zheng, Y Yuan, Y Tan, Y Peng… - Journal of Lightwave …, 2018 - opg.optica.org
InAlAs digital alloy avalanche photodiodes exhibit lower excess noise than those fabricated
from conventional random alloy material. Experiment and Monte Carlo simulation both show …