Semiconductor nanowhiskers: synthesis, properties, and applications

VG Dubrovskii, GE Cirlin, VM Ustinov - Semiconductors, 2009 - Springer
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring

TA Pham, A Qamar, T Dinh, MK Masud… - Advanced …, 2020 - Wiley Online Library
Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …

[КНИГА][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

[HTML][HTML] GaN based nanorods for solid state lighting

S Li, A Waag - Journal of Applied Physics, 2012 - pubs.aip.org
In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure

LF Zagonel, S Mazzucco, M Tencé, K March… - Nano …, 2011 - ACS Publications
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …

Crystal phases in III--V nanowires: from random toward engineered polytypism

P Caroff, J Bolinsson… - IEEE journal of selected …, 2010 - ieeexplore.ieee.org
III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to
electronics, energy, and biological sensing. The structural quality of NWs is of paramount …

Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire

L Rigutti, M Tchernycheva, A De Luna Bugallo… - Nano …, 2010 - ACS Publications
We report the demonstration of single-nanowire photodetectors relying on carrier generation
in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are …

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

J Ristić, E Calleja, S Fernández-Garrido, L Cerutti… - Journal of crystal …, 2008 - Elsevier
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si
(111) is presented. Ga droplets with different diameters (340–90nm) were deposited on the …

Semiconductor nanowire light‐emitting diodes grown on metal: a direction toward large‐scale fabrication of nanowire devices

ATMG Sarwar, SD Carnevale, F Yang, TF Kent… - Small, 2015 - Wiley Online Library
Bottom‐up nanowires are attractive for realizing semiconductor devices with extreme
heterostructures because strain relaxation through the nanowire sidewalls allows the …

Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters

C Zhao, TK Ng, N Wei, A Prabaswara, MS Alias… - Nano …, 2016 - ACS Publications
High-quality nitride materials grown on scalable and low-cost metallic substrates are
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …