Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs
have superior device performance such as higher mobility, better sub-threshold swing, and …

We have studied the fabrication of solution processed aluminum-oxide (AlOx) gate dielectric
at the maximum process temperature of 300° C for a solution based zinc-tin-oxide (ZTO) thin …

DOI: 10.1002/aelm. 201500086 compatible with various flexible substrates have appeared
in the literature.[38, 39] Several attempts have been made to use sol-gel routes to produce …

We realize p-type thin film transistors (TFT) with solution-processed channels using a sol–
gel route, based on a copper (II) acetate precursor. The sol–gel process initially produces …

High-performance In2O3 thin-film transistors could be prepared by an inkjet-printing method
below 200° C with a single precursor and solvent formulation. The self-combustion reaction …

All-inkjet-printed thin-film transistors (TFTs) have been demonstrated in literature using
mainly laboratory inkjet equipment, simple one-channel layout and only a low number of …

A ring stain is often an undesirable consequence of droplet drying. Particles inside
evaporating droplets with a pinned contact line are transported toward the periphery by …

Ultraviolet–ozone (UV/O 3) treatment was adopted to the fabrication of solution-processed
amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In: Ga: Zn= 1 …

We report the fabrication of high field-effect mobility of∼ 110 cm2/(V s) for inkjet printed
indium–zinc-tin oxide (IZTO) thin film transistors (TFTs). It is found that the morphology of …

In this concise review, the recent advancements in fully inkjet‐printed (IJP) indium‐gallium‐
zinc‐oxide (IGZO) thin‐film transistors (TFTs) over the past years are discussed. IGZO has …