Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices
A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …
generation of highly efficient electronics for high-frequency, high-power and high …
AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer
K Geng, D Chen, Q Zhou, H Wang - Electronics, 2018 - mdpi.com
Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …
Effects of a GaN cap layer on admittance characteristics of AlGaN/GaN MIS structures
K Nishiguchi, K Nakata, N Nishiguchi… - Journal of Applied …, 2023 - pubs.aip.org
GaN caps are commonly used to reduce sheet charge modulation induced by AlGaN/GaN
surface potential. However, the details on how GaN caps affect C–V and G–V characteristics …
surface potential. However, the details on how GaN caps affect C–V and G–V characteristics …
Physics and technology of gallium nitride materials for power electronics
Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …
promising material that can find application in the fields of high-power and high-frequency …
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics
Z Sun, H Huang, R Wang, N Sun, P Tao… - IEEE Electron …, 2019 - ieeexplore.ieee.org
Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …
[HTML][HTML] Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
Y Liang, J Duan, P Zhang, KL Low, J Zhang… - …, 2024 - pmc.ncbi.nlm.nih.gov
Devices under semi-on-state stress often suffer from more severe current collapse than
when they are in the off-state, which causes an increase in dynamic on-resistance …
when they are in the off-state, which causes an increase in dynamic on-resistance …
Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes
P Dalapati, S Arulkumaran, D Mani, H Li, H **e… - Materials Science and …, 2024 - Elsevier
The understanding of the properties of silicon nitride (SiN x) deposited by plasma-enhanced
chemical vapor deposition (PECVD) is crucial as this layer is widely used for gate dielectric …
chemical vapor deposition (PECVD) is crucial as this layer is widely used for gate dielectric …
Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs
L He, L Li, F Yang, Y Zheng, J Zhang, T Que, Z Liu… - Applied Surface …, 2021 - Elsevier
We correlate electical behaviors of recessed-gate Al 2 O 3/GaN MOS-FETs with the lattice
damage at MOS interface region by directly comparing plasma-etching (inductively coupled …
damage at MOS interface region by directly comparing plasma-etching (inductively coupled …
Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack
M Hatano, Y Taniguchi, S Kodama… - Applied Physics …, 2014 - iopscience.iop.org
In this paper, we report on AlGaN/GaN metal–insulator–semiconductor high-electron-
mobility transistors (MIS-HEMTs) fabricated using ZrO 2/Al 2 O 3 as a gate dielectric stack …
mobility transistors (MIS-HEMTs) fabricated using ZrO 2/Al 2 O 3 as a gate dielectric stack …
Suppression of current collapse in enhancement mode GaN-based HEMTs using an AlGaN/GaN/AlGaN double heterostructure
SY Ho, CH Lee, AJ Tzou, HC Kuo… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Current collapse is a phenomenon that increases the channel resistance during the
switching process when the high gate and drain voltages are applied. The effect can be …
switching process when the high gate and drain voltages are applied. The effect can be …