Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

The electrical manipulation of magnetism and magnetic properties has been achieved
across a number of different material systems. For example, applying an electric field to a …

Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …

Over the past few decades, magnetoelectric (ME) materials and devices have been
investigated extensively, which is one of the most interesting research topics since the …

Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Multiferroic magnetoelectric composite systems such as ferromagnetic‐ferroelectric
heterostructures have recently attracted an ever‐increasing interest and provoked a great …

Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …

The study of magnetoelectric materials has recently received renewed interest, in large part
stimulated by breakthroughs in the controlled growth of complex materials and by the search …