As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three
crystal polymorphs (ie, rutile, anatase, and brookite), has gained tremendous attention as a …

Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Recent studies have intensively examined 2D materials (2DMs) as promising materials for
use in future quantum devices due to their atomic thinness. However, a major limitation …

Two-dimensional transition metal dichalcogenides (2D TMDs) are a promising class of
functional materials for fundamental physics explorations and applications in next …

Monolayer MSi2N4 (M= Mo, W) has been fabricated and proposed as a promising channel
material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the …

The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D)
transistors has the potential to reduce the contact length while improving the performance of …

Abstract 2D-material semiconductors with unique photonic and optoelectronic properties
process ultralow energy consumption and are naturally compatible to semiconductor …

Diamond is a material with promising electronics applications but with challenges in
effective do**. Cubic boron nitride (cBN), due to its similar lattice structure, is ideal for …

CrX3 (X= I, Br) monolayers exhibit outstanding performance in spintronic devices. However,
the Schottky barrier at the CrX3/electrode interface severely impedes the charge injection …

Using density functional theory (DFT) calculations we thoroughly explored the influence of
grain boundaries (GBs) in monolayer MoS2 composed of S-polar (S5| 7), Mo-polar (Mo5| 7) …