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[HTML][HTML] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap
semiconductors that can provide devices having high breakdown voltages and are capable …
semiconductors that can provide devices having high breakdown voltages and are capable …
Impact ionization coefficients and critical electric field in GaN
Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction
diode are experimentally investigated at 223–373 K by novel photomultiplication …
diode are experimentally investigated at 223–373 K by novel photomultiplication …
A review on the progress of AlGaN tunnel homojunction deep-ultraviolet light-emitting diodes
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals
have extremely low light-emission efficiencies due to the absorption in p-type GaN anode …
have extremely low light-emission efficiencies due to the absorption in p-type GaN anode …
Deconvolution of light-and heavy-hole contributions to measurements of the temperature-dependent Hall effect in zincblende copper iodide
This study presents a detailed experimental investigation of conductivity and Hall effect
measurements in copper iodide (Cu I), which is complemented by density-functional theory …
measurements in copper iodide (Cu I), which is complemented by density-functional theory …
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
A nearly-ideal edge termination for GaN p–n junctions was designed and demonstrated
using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra …
using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra …