Nanomaterials for quantum information science and engineering

A Alfieri, SB Anantharaman, H Zhang… - Advanced …, 2023 - Wiley Online Library
Quantum information science and engineering (QISE)—which entails the use of quantum
mechanical states for information processing, communications, and sensing—and the area …

[HTML][HTML] A review of bipolar magnetic semiconductors from theoretical aspects

J Li, X Li, J Yang - Fundamental Research, 2022 - Elsevier
Spintronics, which employs electrons' spin degree of freedom in data storage and
transmission, acts as a promising candidate for next-generation information technology …

Two-dimensional intrinsic ferrovalley with large valley polarization

HX Cheng, J Zhou, W Ji, YN Zhang, YP Feng - Physical Review B, 2021 - APS
Manipulation of the valley degree of freedom provides a novel paradigm in quantum
information technology. In this work, through first principles calculations, we demonstrate …

Valley-related multiple Hall effect in monolayer

X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma - Physical Review B, 2021 - APS
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally
intriguing and practically appealing for exploring novel phenomena and applications, but …

Intrinsic anomalous valley Hall effect in single-layer

R Peng, Y Ma, X Xu, Z He, B Huang, Y Dai - Physical Review B, 2020 - APS
A major obstacle to reaching the wide applications of valleytronics operations is the lack of
suitable anomalous valley Hall (AVH) materials, which should be easily fabricated and …

Prediction of the two-dimensional Janus ferrovalley material LaBrI

P Jiang, L Kang, YL Li, X Zheng, Z Zeng, S Sanvito - Physical Review B, 2021 - APS
Two-dimensional (2D) ferrovalley materials, displaying coexistence of spontaneous spin
and valley polarizations, have recently attracted significant attention due to their potential for …

Spontaneous valley polarization and valley-nonequilibrium quantum anomalous Hall effect in Janus monolayer ScBrI

K Jia, XJ Dong, SS Li, WX Ji, CW Zhang - Nanoscale, 2023 - pubs.rsc.org
Topology and ferrovalley (FV) are two essential concepts in emerging device applications
and the fundamental research field. To date, relevant reports are extremely rare about the …

Strain-induced half-valley metals and topological phase transitions in monolayers

H Huan, Y Xue, B Zhao, G Gao, H Bao, Z Yang - Physical Review B, 2021 - APS
The target of valleytronics developments is to manipulate the valley degree of freedom and
utilize it in microelectronics as charge and spin degrees of freedom. Based on first-principles …

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

X Zhou, RW Zhang, Z Zhang, W Feng… - npj Computational …, 2021 - nature.com
Manipulating valley-dependent Berry phase effects provides remarkable opportunities for
both fundamental research and practical applications. Here, by referring to effective model …

Distinct ferrovalley characteristics of the Janus RuClX (X= F, Br) monolayer

Y Ma, Y Wu, J Tong, L Deng, X Yin, L Zhou, X Han… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …