Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …

Two approaches have been compared for the low temperature epitaxy of thick, partially
relaxed GeSn layers on top of Ge strain relaxed buffers. The benefit of using step-graded …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …