Antiferroelectric materials, where the transition between antipolar and polar phase is
controlled by external electric fields, offer exceptional energy storage capacity with high …

Dielectric capacitors are widely used in pulsed power electronic devices due to their
ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced …

Antiferroelectric (AFE) has emerged as a promising branch of electroactive materials, due to
intriguing physical attributes stemming from the electric field‐induced antipolar‐to‐polar …

Bulk chalcogenide perovskite BaZr S 3 (BZS), with a direct band gap in the visible region, is
an important photovoltaic material, albeit with limited applicability owing to its …

Electrocaloric effect in antiferroelectric PbZrO 3 thin films that undergo antiferroelectric-
ferroelectric phase transition upon cooling down is investigated using atomistic first …

The electrical boundary condition plays an important role in the manipulation of domain
structures in low-dimensional ferroelectric materials, especially ferroelectric nanowires …

Abstract The antiferroelectric (Pb 0.985 Sm 0.01)(Zr 1-x Ti x) O 3 (Ti-PSZO) thin films were
synthesized on Pt (111)/Ti/SiO 2/Si substrates using a chemical solution deposition method …

We report on the correlated investigation between crystal structures, field-induced phase
transition, and energy storage properties of both polycrystalline and epitaxial …

Currently, the electrocaloric effect (ECE) is considered for applications in solid‐state
refrigeration. Direct semi‐classical first‐principles‐based simulation to the case of ultra‐thin …

Antiferroelectric ultrathin PbZrO 3 films can exhibit both ferroelectric and antiferroelectric
behavior depending on the thickness. We use first-principles-based nanoscopic simulations …