Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Scaling the production of synthetic Two-dimensional (2D) materials to industrial quantities
has faced significant challenges due to synthesis bottlenecks whereby few have been …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

Analog hardware accelerators, which perform computation within a dense memory array,
have the potential to overcome the major bottlenecks faced by digital hardware for data …

A nociceptor is a critical and special receptor of a sensory neuron that is able to detect
noxious stimulus and provide a rapid warning to the central nervous system to start the …

Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …

In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …

Wearable devices are a fast-growing technology with impact on personal healthcare for both
society and economy. Due to the widespread of sensors in pervasive and distributed …

Abstract 3D monolithic integration of logic and memory has been the most sought after
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …