Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN
substrates employing a flip-chip architecture. Device performance is optimized for operation …

We use theoretical modeling to investigate the effect of polarization fields and non-radiative
Auger recombination on the efficiency-droop and green-gap problems of polar and nonpolar …

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their
performance at high power is affected by the efficiency-droop problem. Previous …

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with
increasing injection current (droop). Auger recombination is often seen as primary cause of …

We describe a mechanism by which complexes between gallium vacancies and oxygen
and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys …

Auger recombination is an important nonradiative carrier recombination mechanism in many
classes of optoelectronic devices. The microscopic Auger processes can be either direct or …

The potential of III‐nitride based laser diodes (LDs) for solid‐state lighting (SSL) is
discussed. State‐of‐the‐art blue LDs have higher efficiencies at high input power densities …

We report modulation bandwidth measurements on a number of InGaN-based quantum well
LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data …