Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic
and optoelectronic devices. However, solely relying on their intrinsic physical and material …

As famed quantum physicist W. Pauli once said,“The surface was invented by the devil”. The
nonequilibrium state of particles forming the surface, and the presence of dangling bonds …

Transition-metal-dichalcogenides-based near-infrared photodetectors have attracted
significant attention because of their applicability in various sectors, such as consumer …

Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …

Self-powered photodetectors attracted significant attention due to their ability to convert light
signals into electrical signals without an external power source. Tin Selinide (SnSe) is a …

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors
(FETs) have been widely studied; however, only a few works have investigated the …

Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer
(temperature modulation) on material characteristics and optoelectronic device application …

Gallium nitride (GaN) technology has matured and commercialised for optoelectronic
devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously …

III-nitrides are intriguing materials with the potential to be used in various interdisciplinary
applications, including high-power optoelectronics, energy conversion, green technologies …