The integration of dissimilar materials into heterostructures has become a powerful tool for
engineering interfaces and electronic structure. The advent of 2D materials has provided …

A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Hexagonal boron nitride (h‐BN) has emerged as a strong candidate for two‐dimensional
(2D) material owing to its exciting optoelectrical properties combined with mechanical …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D)
semiconductors are essential for scaled optoelectronic devices. However, conventional …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …

Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Material integration strategies, such as epitaxial growth, usually involve strong chemical
bonds and are typically limited to materials with strict structure matching and processing …