FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
C Fenouillet-Beranger, S Denorme, P Perreau… - Solid-State …, 2009 - Elsevier
In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried
Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate …
Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate …
The evolution of technology for light metals over the last 50 years: Al, Mg, and Li
JW Evans - JOM, 2007 - Springer
* Including anode manufacture. shipped to customers is shown in Figure 4a while Figure 4b
illustrates the use to which sectors of the North American economy are putting aluminum …
illustrates the use to which sectors of the North American economy are putting aluminum …
Junctionless versus inversion-mode gate-all-around nanowire transistors from a low-frequency noise perspective
E Simoen, A Veloso, P Matagne… - … on Electron Devices, 2018 - ieeexplore.ieee.org
The low-frequency noise behavior of junction-less (JL) gate-all-around (GAA) nanowire
(NW) FETs has been investigated and compared with similar inversion-mode (IM) devices. It …
(NW) FETs has been investigated and compared with similar inversion-mode (IM) devices. It …
[PDF][PDF] Comparative study of the low-frequency-noise behaviors in a-IGZO thin-film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
A comparative study is made of the low-frequency noise (LFN) in amorphous indium–
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al2O3 and Al2O3/SiNx gate …
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al2O3 and Al2O3/SiNx gate …
On the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noise
E Simoen, A Veloso, Y Higuchi… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs
with an equivalent oxide thickness of the SiO 2/HfO 2 bilayer in the range~ 1 nm has been …
with an equivalent oxide thickness of the SiO 2/HfO 2 bilayer in the range~ 1 nm has been …
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system
S Ohmi - IEICE Electronics Express, 2014 - jstage.jst.go.jp
The importance of Si surface flatness on metal-oxide-semiconductor field-effect transistor
(MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) high-k gate insulator …
(MOSFET) characteristics with ultrathin hafnium oxynitride (HfON) high-k gate insulator …
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs
This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI
NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is …
NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is …
Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs
E Simoen, A Federico, M Aoulaiche… - Semiconductor …, 2014 - iopscience.iop.org
Low-frequency noise has been used to study the impact of an Al 2 O 3 work-function-
engineering cap layer on the gate oxide quality of SiO 2/HfO 2 DRAM peripheral n-and …
engineering cap layer on the gate oxide quality of SiO 2/HfO 2 DRAM peripheral n-and …
Assessment of the impact of inelastic tunneling on the frequency-depth conversion from low-frequency noise spectra
An expression is derived for the conversion of the frequency axis of a low-frequency noise
spectrum into a depth axis, based on the capture and emission time constant of a random …
spectrum into a depth axis, based on the capture and emission time constant of a random …
Impact of high-k HfO2 dielectric on the low-frequency noise behaviors in amorphous InGaZnO thin film transistors
We have investigated the impact of high-k HfO 2 gate dielectric on the low-frequency noise
(LFN) behaviors of amorphous indium–gallium–zinc oxide thin-film transistors by comparing …
(LFN) behaviors of amorphous indium–gallium–zinc oxide thin-film transistors by comparing …