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[HTML][HTML] Present status of amorphous In–Ga–Zn–O thin-film transistors
The present status and recent research results on amorphous oxide semiconductors (AOSs)
and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga …
and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga …
Conditions during the formation of granitic magmas by crustal melting–hot or cold; drenched, damp or dry?
Granitic magmas extracted from crustal sources can form over a wide variety of P, T and aH
2 O conditions. Both fluid-present and effectively fluid-absent conditions can yield granitic …
2 O conditions. Both fluid-present and effectively fluid-absent conditions can yield granitic …
A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric
We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) with anodic
AlOx gate dielectric on a polyethylene naphthalate (PEN) substrate with a process …
AlOx gate dielectric on a polyethylene naphthalate (PEN) substrate with a process …
[ספר][B] Single-electron devices and circuits in silicon
ZAK Durrani - 2009 - books.google.com
This book reviews research on single-electron devices and circuits in silicon. These devices
provide a means to control electronic charge at the one-electron level and are promising …
provide a means to control electronic charge at the one-electron level and are promising …
Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor
Abstract Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O
(a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface …
(a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface …
Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4
Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO 4 (CAAC IGZO)
thin films were quantified using X-ray diffraction techniques. Above 190 C, nanocrystalline …
thin films were quantified using X-ray diffraction techniques. Above 190 C, nanocrystalline …
Effect of Deposition Time on the Optoelectronics Properties of PbS Thin Films Obtained by Microwave‐Assisted Chemical Bath Deposition
PbS thin films with thickness between 100 and 150 nm were grown for the first time by
microwave‐assisted chemical bath deposition in a commercial automated system with …
microwave‐assisted chemical bath deposition in a commercial automated system with …
Role of rare earth ions in anodic gate dielectrics for indium-zinc-oxide thin-film transistors
Al-alloys and their anodic oxides were used as the gate and the gate dielectric, respectively,
for the indium-zinc-oxide (IZO) thin-film transistors (TFTs). The influence of the Al-alloys on …
for the indium-zinc-oxide (IZO) thin-film transistors (TFTs). The influence of the Al-alloys on …
Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 C
Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a
flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly …
flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly …
Manipulation of polycrystalline TiO2 carrier concentration via electrically active native defects
There is good reason to believe that the properties of semiconducting metal oxides for
catalytic applications can be improved when designed according to the principles of …
catalytic applications can be improved when designed according to the principles of …