Oxide interfaces—an opportunity for electronics

J Mannhart, DG Schlom - Science, 2010 - science.org
Extraordinary electron systems can be generated at well-defined interfaces between
complex oxides. In recent years, progress has been achieved in exploring and making use …

Ultrathin oxide films and interfaces for electronics and spintronics

M Bibes, JE Villegas, A Barthélémy - Advances in Physics, 2011 - Taylor & Francis
Oxides have become a key ingredient for new concepts of electronic devices. To a large
extent, this is due to the profusion of new physics and novel functionalities arising from …

Exsolution trends and co-segregation aspects of self-grown catalyst nanoparticles in perovskites

O Kwon, S Sengodan, K Kim, G Kim, HY Jeong… - Nature …, 2017 - nature.com
In perovskites, exsolution of transition metals has been proposed as a smart catalyst design
for energy applications. Although there exist transition metals with superior catalytic activity …

Superconducting interfaces between insulating oxides

N Reyren, S Thiel, AD Caviglia, LF Kourkoutis… - Science, 2007 - science.org
At interfaces between complex oxides, electronic systems with unusual electronic properties
can be generated. We report on superconductivity in the electron gas formed at the interface …

Magnetic effects at the interface between non-magnetic oxides

A Brinkman, M Huijben, M Van Zalk, J Huijben… - Nature materials, 2007 - nature.com
The electronic reconstruction at the interface between two insulating oxides can give rise to
a highly conductive interface,. Here we show how, in analogy to this remarkable interface …

Tunable quasi-two-dimensional electron gases in oxide heterostructures

S Thiel, G Hammerl, A Schmehl, CW Schneider… - Science, 2006 - science.org
We report on a large electric-field response of quasi–two-dimensional electron gases
generated at interfaces in epitaxial heterostructures grown from insulating oxides. These …

Direct observation of a two-dimensional hole gas at oxide interfaces

H Lee, N Campbell, J Lee, TJ Asel, TR Paudel… - Nature materials, 2018 - nature.com
The discovery of a two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface has
resulted in the observation of many properties,,–not present in conventional semiconductor …

Effect of oxygen vacancies in the substrate on the electrical properties of the interface

A Kalabukhov, R Gunnarsson, J Börjesson… - Physical Review B …, 2007 - APS
We experimentally investigated optical, electrical, and microstructural properties of
heterointerfaces between two thin-film perovskite insulating materials, SrTiO 3 (STO) and …

Origin of the Two-Dimensional Electron Gas at Interfaces: <?format ?>The Role of Oxygen Vacancies and Electronic Reconstruction

ZQ Liu, CJ Li, WM Lü, XH Huang, Z Huang, SW Zeng… - Physical Review X, 2013 - APS
The relative importance of atomic defects and electron transfer in explaining conductivity at
the crystalline LaAlO 3/SrTiO 3 interface has been a topic of debate. Metallic interfaces with …

Nanoscale control of an interfacial metal–insulator transition at room temperature

C Cen, S Thiel, G Hammerl, CW Schneider… - Nature materials, 2008 - nature.com
Abstract Experimental,,,,,, and theoretical, investigations have demonstrated that a quasi-two-
dimensional electron gas (q-2DEG) can form at the interface between two insulators: non …