In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

Since a few years, indium nitride promising properties for device applications have attracted
much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth …

The potential of InN as a photovoltaic material is described. For solar applications, several
key developments such as p-type do** and solid-state rectifying junctions have yet to be …

In response to the current intensive scientific and commercial interest in nitride
semiconductors, several recent works have reviewed their material and physical properties …

In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic
layer deposition (PE-ALD). By systematically investigating the growth parameters, we …

The epitaxial growth of GaN on Ge is reported. The authors found that direct growth of GaN
performs exceptionally well on Ge (111) with plasma assisted molecular beam epitaxy. A …

This work addresses the required properties and device structures for an InGaN solar cell.
Homojunction InGaN solar cells with a bandgap greater than 2.0 eV are specifically targeted …

Structural characterization has been performed on (0001)-GaN epilayers grown on (111)-Ge
substrates using plasma assisted molecular beam epitaxy. By combining high-resolution x …

InxGa1− xN (InGaN) alloys are predominantly grown by heteroepitaxy on foreign substrates.
Most often Al2O3, SiC and Si are used as substrates, however this complicates vertical …

GaInN/GaN p‐i‐n double‐heterojunction structures were grown by metal‐organic vapor
phase epitaxy on c‐plane sapphire substrates, and light‐emitting solar cells with different …