Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

In this paper, the impact of ferroelectric layer thickness (t FE) on input drain current
characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator …

In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …

In this article, a numerical simulation study for the ferroelectric gate oxide tunnel field-effect
transistor (Ferro-TFET) has been presented. The performance of the device is analyzed …

This work employs comparative analysis to explore the noise behavior of a single-gate
negative capacitance field-effect transistor (SG-NCFET) and highly doped double pocket …

This paper deals the hybridization of tunnel FET with the memristor for better execution of
combinational and sequential circuits. Here, device structure of vertical tunnel FET and …

This paper presents the analysis of noise in Single Gate Extended Source TFET (SG-
ESTFET) considering the absence and presence of interface trap charges, when the device …

In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

In this paper, the investigation of dual metal double gate (DMG) hetero-dielectric TFET with
drain-gate underlap for nanoscale digital applications is analyzed. Drain-gate underlap …