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Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Achieving direct band gap in germanium through integration of Sn alloying and external strain
GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
Growth and applications of GeSn-related group-IV semiconductor materials
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research
attention as possible direct band gap semiconductors with prospective applications in …
attention as possible direct band gap semiconductors with prospective applications in …
Group IV direct band gap photonics: methods, challenges, and opportunities
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the alloys
The unusual nonlinear behaviors of the band gaps in Sn x Ge 1− x alloys are investigated
using first-principles calculations. We show that the large bowing of the direct band gap is …
using first-principles calculations. We show that the large bowing of the direct band gap is …
[HTML][HTML] “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-
semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection …
semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection …
GeSn technology: Extending the Ge electronics roadmap
First principles study showed indicated band gap of Ge can be tuned by alloying with Sn and
metastable GeSn alloys can be synthesized at or above room temperature. Subsequently …
metastable GeSn alloys can be synthesized at or above room temperature. Subsequently …