As a new type of two-terminal nonlinear nanoelectronic component, memristors have shown
significant application prospects in the post Moore's electron era, as they can store and …

This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI)
semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which …

In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐
volatile memory based on emerging materials can be a promising avenue for introducing …

Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching
devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled …

This study used an Al 2 O 3 interfacial layer to improve the reliability characteristics of Ag/Ta
2 O 5/Au resistive random access memory (RRAM), such as endurance and retention. The …

The performance of nonvolatile memory has to be further enhanced in order to keep up with
the quick growth of electronic devices. The present study focuses on optimizing the …

This study focuses on InGaZnO-based synaptic devices fabricated using reactive
radiofrequency sputtering deposition with highly uniform and reliable multilevel memory …

This study delves into the characterization of IGZO/ZnO bilayer memristors, examining the
impact of ZnO thickness and voltage scan rate on device performance. Bilayer memristors …

A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D)
image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully …

Herein, the role of top metal electrode work functions on the performance of flexible
broadband ultraviolet (UV)–visible–near‐infrared (NIR) flexible Cs2SnI6 (CSI) …