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Wake-Up Free Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films
A Chouprik, V Mikheev, E Korostylev, M Kozodaev… - Nanomaterials, 2023 - mdpi.com
The development of the new generation of non-volatile high-density ferroelectric memory
requires the utilization of ultrathin ferroelectric films. The most promising candidates are …
requires the utilization of ultrathin ferroelectric films. The most promising candidates are …
ZnO-based artificial synaptic diodes with zero-read voltage for neural network computing
R Yang, T Li, D Hu, Q Chen, B Lu, F Huang… - Applied Physics …, 2024 - pubs.aip.org
Brain-inspired neuromorphic sensory devices play a crucial role in addressing the
limitations of von Neumann systems in contemporary computing. Currently, synaptic devices …
limitations of von Neumann systems in contemporary computing. Currently, synaptic devices …