We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

Supercells are often used in ab initio calculations to model compound alloys, surfaces, and
defects. One of the main challenges of supercell electronic structure calculations is to …

We have synthesized GaN x As 1− y P y alloys (⁠ x∼ 0.003− 0.01 and y= 0–0.4⁠) using
nitrogen (N) ion implantation into GaAsP epilayers followed by pulsed laser melting and …

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are
distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of …

Generating, manipulating and detecting electron spin polarization and coherence at room
temperature is at the heart of future spintronics and spin-based quantum information …

The electron effective mass, me, has been determined by magnetophotoluminescence in as-
grown and hydrogenated Ga As 1− x N x samples for a wide range of nitrogen …

We investigate the electronic properties of Ga As 1− x Bi x by photoluminescence at variable
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T)⁠. In Ga As 0.981 Bi 0.019⁠ …

Nanowire (NW) lasers operating in the near-infrared spectral range are of significant
technological importance for applications in telecommunications, sensing, and medical …

Dilute nitrides are novel III–V–N semiconductor alloys promising for a great variety of
applications ranging from nanoscale light emitters and solar cells to energy production via …

Alloying is a commonly accepted method to tailor properties of semiconductor materials for
specific applications. Only a limited number of semiconductor alloys can be easily …