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[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Radiation damage effects in Ga 2 O 3 materials and devices
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …
hardness. Their suitability for space missions or military applications, where issues of …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Gamma-Ray Irradiation Induced Dielectric Loss of SiO2/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps
The performance of integrated circuits (ICs) deteriorates under irradiation. It is commonly
believed that passive components in the IC such as through-silicon vias (TSVs) are …
believed that passive components in the IC such as through-silicon vias (TSVs) are …
Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces
Mobile charge carriers are essential components in high-performance, nano-engineered
semiconductor devices. Employing charge carriers confined to heterointerfaces, the so …
semiconductor devices. Employing charge carriers confined to heterointerfaces, the so …
A high-sensitivity AlGaN/GaN HEMT terahertz detector with integrated broadband bow-tie antenna
Many emerging applications in the terahertz (THz) frequency range demand highly
sensitive, broadband detectors for room-temperature operation. Field-effect transistors with …
sensitive, broadband detectors for room-temperature operation. Field-effect transistors with …
A review of gan hemt dynamic on-resistance and dynamic stress effects on field distribution
Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …
characteristics, including critical electric field, electron mobility, and specific on-resistance …
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
The robust radiation resistance of wide-band gap materials is advantageous for space
applications, where the high-energy particle irradiation deteriorates the performance of …
applications, where the high-energy particle irradiation deteriorates the performance of …