The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …

Perpendicularly magnetized tunnel junctions (p-MTJs) show promise as reliable candidates
for next-generation memory due to their outstanding features. However, several key …

Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is
gaining significant industrial and academic attention due to its potential application as a non …

Advances in Magnetic Materials: Processing, Properties, and Performance discusses recent
developments of magnetic materials, including fabrication, characterization and applications …

We investigated the low temperature performance of CoFeB/MgO-based perpendicular
magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage …

Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have
emerged as a canonical building block for nonvolatile memory and logic. However, the …

Power consumption is the main limitation in the development of new high performance
random access memory for portable electronic devices. Magnetic RAM (MRAM) with …

The concept of Perpendicular Shape Anisotropy STT-MRAM (PSA-STT-MRAM) has been
recently proposed as a solution to enable the downsize scalability of STT-MRAM devices …

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were
studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was …