The thermal analysis of GaN-based high electron-mobility transistors (HEMTs) is carried out
from steady-state and transient aspects, respectively. An improved closed-form nonlinear …

An accurate analytic model is proposed for estimating the junction temperature and thermal
resistance in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) including …

A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar
transistors (HBTs) is presented. The heat flow analysis through the device has to be …

Temperature rising which originates from self‐heating degrades the electrical
characteristics, reliability, and lifetime of high‐power GaN‐HEMTs. In this article, a …

In this article, we present and evaluate compact static thermal model parameter extraction
techniques for modern silicon germanium heterojunction bipolar transistors (SiGe HBTs) …

In this paper, we report a new scalable model for the thermal impedance of III-V DHBTs that
has been developed based on the physics of heat diffusion within the HBT architecture. The …

In this brief, we propose a simple approach to extract the contribution of the back-end-of-line
(BEOL) layers on the thermal resistance of heterojunction bipolar transistors (HBTs). A finite …

A detailed investigation on internal thermal phenomena of GaAs hetero bipolar transistor
(HBT) structure is presented especially when sub-collector is considered. This allows for a …

An accurate closed-form analytical model is proposed to predict the junction temperature
and thermal resistance of silicon germanium heterojunction bipolar transistors, including the …

In this study, an accurate temperature prediction model is proposed for GaAs HBT, which
considers both the bias voltage and current rather than power consumption only. The …