Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors
Diamond has been explored to develop prototype field-effect transistors (FETs). At present,
various architectures that are suited to high temperature and high-radiation environments …
various architectures that are suited to high temperature and high-radiation environments …
Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and …
Boron-doped diamond (BDD) has tremendous potential for use as an electrode material with
outstanding characteristics. The substrate material of BDD can affect the electrochemical …
outstanding characteristics. The substrate material of BDD can affect the electrochemical …
Fluctuation spectroscopy as a probe of granular superconducting diamond films
We present resistance versus temperature data for a series of boron-doped nanocrystalline
diamond films. Upon extracting the fluctuation conductivity near the critical temperature we …
diamond films. Upon extracting the fluctuation conductivity near the critical temperature we …
[HTML][HTML] Focused ion beam-based microfabrication of boron-doped diamond single-crystal tip cantilevers for electrical and mechanical scanning probe microscopy
In this paper, the fabrication process and electromechanical properties of novel atomic force
microscopy probes utilising single-crystal boron-doped diamond are presented. The …
microscopy probes utilising single-crystal boron-doped diamond are presented. The …
General optimization of breakdown voltage and resistivity on power components in terms of do** level and thickness
D Eon, J Cañas - Diamond and Related Materials, 2023 - Elsevier
The emergence of wide band-gap (WBG) materials promises improved performance in
semiconductor devices, but also presents significant technical challenges. Develo** this …
semiconductor devices, but also presents significant technical challenges. Develo** this …
Carrier transport mechanism of diamond p+–n junction at low temperature using Schottky–pn junction structure
A Karasawa, T Makino, A Traore, H Kato… - Japanese Journal of …, 2021 - iopscience.iop.org
We elucidate the carrier transport mechanism from the p+-layer (metallic-conduction) to the
n-layer (band-conduction) in a diamond p+–n junction, which is the basic structure of …
n-layer (band-conduction) in a diamond p+–n junction, which is the basic structure of …
Evaluation of chronically implanted subdural boron doped diamond/CNT recording electrodes in miniature swine brain
When implantable recording devices for brain or neural electrical activity are designed, the
number of available materials for electrodes is quite limited. The material must be …
number of available materials for electrodes is quite limited. The material must be …
Irradiation-induced modification of the superconducting properties of heavily-boron-doped diamond
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity
when doped heavily with boron. The phenomena has been demonstrated in samples grown …
when doped heavily with boron. The phenomena has been demonstrated in samples grown …
Plasma etching phenomena in heavily boron-doped diamond growth
Heavily boron-doped diamond growth turned into etching when boron-to-carbon molar
ratios in the feed gas exceeded 1% and the carbon fraction was below 0.7%, under the …
ratios in the feed gas exceeded 1% and the carbon fraction was below 0.7%, under the …
Weak Electron Irradiation Suppresses the Anomalous Magnetization of N‐Doped Diamond Crystals
A Setzer, PD Esquinazi, O Daikos… - … status solidi (b), 2021 - Wiley Online Library
Several diamond bulk crystals with a concentration of electrically neutral single
substitutional nitrogen atoms of≲ 80 ppm, the so‐called C or P1 centers, are irradiated with …
substitutional nitrogen atoms of≲ 80 ppm, the so‐called C or P1 centers, are irradiated with …