A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Phase change random access memory for neuro‐inspired computing
Neuro‐inspired computing using emerging memristors plays an increasingly significant role
for the realization of artificial intelligence and thus has attracted widespread interest in the …
for the realization of artificial intelligence and thus has attracted widespread interest in the …
Tunable mid‐infrared phase‐change metasurface
The intense light–matter interaction of plasmonic metasurfaces provides an appealing
platform for optical sensing. To date, most metasurface sensors are not spectrally tuned …
platform for optical sensing. To date, most metasurface sensors are not spectrally tuned …
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing
Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite
related to the encoding of information and its emulation using electronic hardware is one of …
related to the encoding of information and its emulation using electronic hardware is one of …
“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
[PDF][PDF] Phase-change memory materials by design: a strain engineering approach
DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …
Recent trends in neuromorphic systems for non-von Neumann in materia computing and cognitive functionalities
In the era of artificial intelligence and smart automated systems, the quest for efficient data
processing has driven exploration into neuromorphic systems, aiming to replicate brain …
processing has driven exploration into neuromorphic systems, aiming to replicate brain …
Direct observation of metastable face-centered cubic Sb2Te3 crystal
Although phase change memory technology has developed drastically in the past two
decades, the cognition of the key switching materials still ignores an important member, the …
decades, the cognition of the key switching materials still ignores an important member, the …
Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses
Ovonic threshold switching in chalcogenide glasses is a crucial physical phenomenon
behind state-of-the-art memory chip technologies. Binary tellurides are one of the emerging …
behind state-of-the-art memory chip technologies. Binary tellurides are one of the emerging …
Recent advances in doped Ge 2 Sb 2 Te 5 thin film based phase change memories
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves
superior in the category of memory devices due to a combination of their unique set of …
superior in the category of memory devices due to a combination of their unique set of …