After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

22FDX™ is the industry's first FDSOI technology architected to meet the requirements of
emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the …

Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS
scaling to 22 nm node and beyond but also for improving the performances of legacy …

The economic health of the semiconductor industry requires substantial scaling of chip
power, performance, and area with every new technology node that is ramped into …

An approach is proposed to realize large-scale,“high-temperature” and high-fidelity quantum
computing integrated circuits based on single-and multiple-coupled quantum-dot electron …

A compact analytical model is proposed along with a parameter extraction methodology to
accurately capture the steady-state (DC) sequential tunneling current observed in the …

E-beam inspection provides an alternative approach to brightfield inspection for detection of
otherwise difficult to detect physical defects. Advantages of E-beam inspection include …

Starting with the full characterization of the n-and p-MOSFETs in a 22-nm FDSOI CMOS
process from DC and S-parameter measurements over temperature in the 2 K to 400 K …

This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …

(57) ABSTRACT A semiconductor structure is provided in which an nFET nanosheet stack of
suspended silicon channel material nanosheets is present in an nFET device region and a …