Engineering of chalcogenide phase-change materials at the nanoscale is required to
improve the performances of ultimate size memory devices and reduce their power …

Nanoparticles can offer an alternative approach to fabricate phase‐change materials. The
chemical synthesis of GeTe nanoparticles using organometallic precursors exploits high …

As-deposited and unencapsulated GeTe 1-x Se x (x= 0, 0.5) 3-μm-thick amorphous films on
Si (001) were obtained via the thermal co-evaporation technique. The crystallization and the …

Abstract Since Germanium Telluride (GeTe) has a narrow band gap, its application is limited
to optoelectronics. However, do** can enhance its properties and make it suitable for …

Germanium telluride (GeTe) has for many years attracted attention because of its good
thermoelectric properties. The remarkably low lattice thermal conductivity, despite the simple …