CMOS IC technology has become an affordable means for implementing capable systems
operating at 300 GHz and above. CMOS circuits have been used to generate a signal up to …

This article presents a 420-GHz phase imaging system designed in a 40-nm CMOS
technology. It consists of a transmitter (TX), based on a multiplier chain, and a receiver (RX) …

A 270–300-GHz double-balanced up-converter fabricated in 65-nm CMOS is presented. The
up-converter is the first to employ accumulation mode MOS asymmetric varactors (ASVARs) …

A 560-GHz radio frequency (RF) front-end employing an accumulation mode MOS
symmetric varactor (SVAR) subharmonic mixer achieves a minimum single sideband (SSB) …

An integrated 425-GHz radio frequency (RF) to 25-GHz intermediate frequency (IF) second-
order subharmonic downconverter, including an on-chip 8X local oscillator (LO) signal …

The small wavelength and non-ionizing nature of EM waves in the THz spectrum make this
frequency band attractive for high-resolution imaging applications. While amplitudebased …

For the terahertz harmonic mixer, a design model based on Half-Subdivision and Half-
Global Design Method (HS-HGDM) with a single functional unit is proposed. The single …

A fully integrated 490-GHz heterodyne imager is reported. The imager adopts a second
subharmonic resistive mixer wherein the transmission lines and small capacitors are used to …

With growing interest in terahertz (THz) imaging, there has been an increasing demand for
low-cost, low-power, and high-sensitivity THz receiver. Lately, heterodyne structures in …

A fully integrated 490-GHz receiver (RX) adopting a dual-locking receiver-based FLL (DL-
RBFLL) is presented. The proposed RBFLL structure saves the power consumption by …