Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

In this review article, we summarize some recent key results in the development of
antiferromagnetic spintronics. Current-induced switching of the Néel vector orientation has …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with
minimum heat dissipation. In materials such as Mn2Au and CuMnAs, electric rather than …

While the understanding of altermagnetism is still at a very early stage, it is expected to play
a role in various fields of condensed matter research, for example spintronics, caloritronics …

Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for
advancing antiferromagnet-based memory devices. In this study, we directly observed the …

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up
new avenues of research towards ultrafast, high-density spintronic devices. AF domain …

The anomalous Nernst effect (ANE) gives rise to an electrical response transverse to
magnetization and an applied temperature gradient in a magnetic metal. A nanoscale …

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation
frequencies and field robustness. Despite the rapid progress in proof-of-principle …

2D tellurium (Te) films are appealing materials in electronic devices like transistors and
detectors. However, applications in the field of memristors of the 2D Te film are still rare …