6G roadmap for semiconductor technologies: Challenges and advances
N Cahoon, P Srinivasan… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
The sub-THz spectrum between 100GHz and 300GHz is of great interest for achieving next
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
An overview of state-of-the-art D-band radar system components
P Stadler, H Papurcu, T Welling, S Tejero Alfageme… - Chips, 2022 - mdpi.com
In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above fmax/2in Sub-THz/THz Frequencies
This article presents a single-stage single-ended (SE) and a multistage pseudo-differential
cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz …
cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz …
A SiGe HBT -Band LNA With Butterworth Response and Noise Reduction Technique
This letter presents a wideband high-gain fourstage cascode D-band low noise amplifier
(LNA) implemented in a 0.13-μm SiGe BiCMOS technology. A shunt inductor that is used at …
(LNA) implemented in a 0.13-μm SiGe BiCMOS technology. A shunt inductor that is used at …
Design and On-Wafer Characterization of -Band SiGe HBT Low-Noise Amplifiers
This paper presents the design and thorough on-wafer characterization of two G-band low-
noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) …
noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) …
A SiGe BiCMOS D-band LNA with gain boosted by local feedback in common-emitter transistors
The performance of silicon amplifiers in D-band is limited by the low gain of transistors
operated close to f_\max. Cascode stages, yielding higher gain than a single device, are …
operated close to f_\max. Cascode stages, yielding higher gain than a single device, are …
Analysis and design of D-band cascode SiGe BiCMOS amplifiers with gain-bandwidth product enhanced by load reflection
Emerging applications in D-band (110–170GHz) demand amplifiers with high gain-
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
A 125–143-GHz frequency-reconfigurable BiCMOS compact LNA using a single RF-MEMS switch
J Heredia, M Ribó, L Pradell, ST Wipf… - IEEE Microwave and …, 2019 - ieeexplore.ieee.org
In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier
(LNA) is presented for the first time. It consists of two cascode stages and was fabricated …
(LNA) is presented for the first time. It consists of two cascode stages and was fabricated …
A full D-band low noise amplifier in 130 nm SiGe BiCMOS using zero-ohm transmission lines
T Maiwald, J Potschka, K Kolb, M Dietz… - 2020 15th European …, 2021 - ieeexplore.ieee.org
This paper presents the design, analysis and optimization of a three-stage cascode full D-
Band Low Noise Amplifier (LNA) in an industrial established 130nm SiGe BiCMOS …
Band Low Noise Amplifier (LNA) in an industrial established 130nm SiGe BiCMOS …
Low-noise amplifiers for W-band and D-band passive imaging systems in SiGe BiCMOS technology
In this paper, two wideband and low power mmwave LNAs implemented in a 0.13 μm SiGe
BiCMOS technology are presented. The W-band LNA has 22.3 dB peak gain, 17 GHz 3-dB …
BiCMOS technology are presented. The W-band LNA has 22.3 dB peak gain, 17 GHz 3-dB …