Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation
Develo** uncooled photodetectors at midwavelength infrared (MWIR) is critical for various
applications including remote sensing, heat seeking, spectroscopy, and more. In this study …
applications including remote sensing, heat seeking, spectroscopy, and more. In this study …
Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared
(SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays …
(SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays …
Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are
increasingly attracting attention due to their feasibility as a platform for the integration of …
increasingly attracting attention due to their feasibility as a platform for the integration of …
Feasibility of achieving high detectivity at short-and mid-wavelength infrared using nanowire-plasmonic photodetectors with p–n heterojunctions
Photodetection at short-and mid-wavelength infrared (SWIR and MWIR) enables various
sensing systems used in heat seeking, night vision, and spectroscopy. As a result, uncooled …
sensing systems used in heat seeking, night vision, and spectroscopy. As a result, uncooled …
Single crystalline SmB6 nanowires for self-powered, broadband photodetectors covering mid-infrared
Y Zhou, J Lai, L Kong, J Ma, Z Lin, F Lin, R Zhu… - Applied Physics …, 2018 - pubs.aip.org
Self-powered photodetectors with a broadband response have attracted great attention due
to their potential applications in sensing, imaging, communication, and spectroscopy …
to their potential applications in sensing, imaging, communication, and spectroscopy …
Axial InAs (Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 2.5 µm
In this work, we report on the growth of high yield small bandgap InAs and InAsSb inserts
embedded in InAsP nanowires grown on an InP substrate by catalyst-free selective-area …
embedded in InAsP nanowires grown on an InP substrate by catalyst-free selective-area …
Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers
Compound semiconductor mid-wavelength infrared photodetectors operating at room
temperature are the sensors of choice for demanding applications such as thermal imaging …
temperature are the sensors of choice for demanding applications such as thermal imaging …
[PDF][PDF] Develo** uncooled InAsSb nanowire photodetector arrays with Al2O3 passivation for photodetection at mid-wavelegnth infrared
Develo** uncooled photodetectors at mid-wavelength infrared (MWIR) is critical for
various applications including remote sensing, heat seeking, spectroscopy, and more. In this …
various applications including remote sensing, heat seeking, spectroscopy, and more. In this …
[PDF][PDF] Comprehensive Three-dimensional Model Enables Design of Nanostructured Infrared Photodetectors
D Ren - researchgate.net
Due to the unique three-dimensional (3-D) geometries of nanowires—ie, large surface-to-
volume ratios and smaller cross-sections at the nanowire-substrate interfaces—their carrier …
volume ratios and smaller cross-sections at the nanowire-substrate interfaces—their carrier …
Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors
D Ren - arxiv preprint arxiv:1907.10848, 2019 - arxiv.org
Due to the unique three-dimensional (3-D) geometries of nanowire-ie, large surface-to-
volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier …
volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier …