Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …
increasing attention over the past 15 years. The exceptional combination of the unique 1D …
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications
We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
Circuit level analysis of a dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET at nanoscale regime
Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
Low-frequency noise assessment of vertically stacked Si n-channel nanosheet FETs with different metal gates
A Oliveira, A Veloso, C Claeys… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article presents a comparative low-frequency noise (LFN) characterization of gate-all-
around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors …
around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors …
Low–frequency noise in vertically stacked Si N–channel nanosheet FETs
This manuscript presents a systematic low-frequency noise analysis of inversion-mode
vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due …
vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due …
Comparative characterization of NWFET and FinFET transistor structures using TCAD modeling
KO Petrosyants, DS Silkin, DA Popov - Micromachines, 2022 - mdpi.com
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried
out. The electrical and thermal performances in two device structures were analyzed based …
out. The electrical and thermal performances in two device structures were analyzed based …
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs
The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet
(NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking …
(NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking …
Difference between atomic layer deposition TiAl and physical vapor deposition TiAl in threshold voltage tuning for metal gated NMOSFETs
ZY Li, XJ Wang, HL Cai, ZZ Yan… - IEEE Electron Device …, 2021 - ieeexplore.ieee.org
In this work, the influence of TiAl gate electrode fabricated by atomic layer deposition (ALD)
and physical vapor deposition (PVD) on threshold voltage () for metal-gated NMOSFETs is …
and physical vapor deposition (PVD) on threshold voltage () for metal-gated NMOSFETs is …
Series resistance reduction with linearity assessment for vertically stacked junctionless accumulation mode nanowire FET
Vertically stacked junctionless accumulation mode (JLAM) nanowire field effect transistors
(NWFETs) outperform inversion-mode (IM) NWFETs below 10-nm technology nodes, but the …
(NWFETs) outperform inversion-mode (IM) NWFETs below 10-nm technology nodes, but the …
Surface charge modulation and reduction of non-linear electrolytic screening in FET-based biosensing
We experimentally investigate the influence of non-linear electrolytic screening by the
electric double layer (EDL) and its impact on the field-effect transistor (FET) sensitivity to …
electric double layer (EDL) and its impact on the field-effect transistor (FET) sensitivity to …