Aluminum nitride (AlN) has gained wide interest owing to its high values of elastic modulus,
band gap, dielectric strength, resistivity, thermal conductivity and acoustic velocities …

Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …

Doped AlN thin films, especially high Sc-ratio AlScN film, have been reported to significantly
improve the piezoelectric properties and draw attention for high performance resonators …

In the past few decades, silicon photonics with complementary metal-oxide-semiconductor
(CMOS) process compatibility has been well developed and successfully applied to …

SummaryThis paper reports a method of frequency scaling millimeter wave thin-film lithium
niobate (LiNbO 3) acoustic resonators using ion beam assisted Argon gas cluster trimming …

Due to their favorable electromechanical properties, such as high sound velocity, low
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …

Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN
has gained particular technological relevance due to its unique material properties (large …

Scandium aluminum nitride (ScAlN) demonstrates notable properties such as high
electromechanical coupling, low dielectric permittivity, reduced acoustic losses, and so on …

Normally-off recessed-gate AlGaN/GaN metal–oxide–semiconductor high-electron-mobility
transistors (MOSHEMTs) were fabricated using argon-based ion beam etching and …