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A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution
We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …
temperature in and around the active area of semiconductor devices with submicron spatial …
Device-level thermal management of gallium oxide field-effect transistors
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
In this paper, we present self-consistent electrothermal simulations of single-finger and
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
Applications and impacts of nanoscale thermal transport in electronics packaging
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
[HTML][HTML] Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
Channel temperature analysis of GaN HEMTs with nonlinear thermal conductivity
A Darwish, AJ Bayba, HA Hung - IEEE Transactions on electron …, 2015 - ieeexplore.ieee.org
This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN
HEMTs by comparing experimental data with numerical device simulations. Under power …
HEMTs by comparing experimental data with numerical device simulations. Under power …