In the context of correlated insulators, where electron–electron interactions (U) drive the
localization of charge carriers, the metal–insulator transition is described as either …

We report the 1/f noise characteristics at low frequency in graphene field-effect transistors
that utilized a high-κ dielectric tantalum oxide encapsulated layer (a few nanometer thick) …

Do** of graphene is a viable route toward enhancing its electrical conductivity and
modulating its work function for a wide range of technological applications. In this work, the …

We induce surface carrier densities up to∼ $7\centerdot {{10}^{14}} $ cm− 2 in few-layer
graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4-and 5 …

The intrinsic n-type of epitaxial graphene on SiC substrate limits its applications in
microelectronic devices, and it is thus vital to modulate and achieve p-type and charge …

Structural defects are commonly undesirable in materials, however, atomic-level defect
engineering is promising to improve the electronic, mechanical and chemical properties of …

A significant improvement in the power conversion efficiency (PCE) and the environmental
stability of n-Graphene/p-Si solar cells is indicated through effective n-do** of graphene …