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Role of interface/border traps on the threshold voltage instability of SiC power transistors
In this paper the role of interface/border defects on the threshold voltage drift (ΔV TH) of SiC
power MOSFETs has been investigated by means of slow and fast positive bias temperature …
power MOSFETs has been investigated by means of slow and fast positive bias temperature …
Physical Modelling of Charge Trap** Effects in SiC MOSFETs
In the recent past, lots of efforts have been put into further develo** SiC power MOSFETs.
In addition to optimization of device geometry, ie, vertical device structure, various post …
In addition to optimization of device geometry, ie, vertical device structure, various post …
Radiative and Non-Radiative Phenomena During Gate-Switching in Silicon Carbide Power MOSFETs
MW Feil - 2024 - repositum.tuwien.at
Climate change mitigation is a prominent topic in politics and society today. Green energy
generation, its use and improving and develo** new technologies is hereby of central …
generation, its use and improving and develo** new technologies is hereby of central …