Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser
(57) ABSTRACT A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin
metal contact and current spreading layer within the optical cavity that provides for improved …
metal contact and current spreading layer within the optical cavity that provides for improved …
Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact
JO Song, JS Ha, TY Seong - IEEE transactions on electron …, 2009 - ieeexplore.ieee.org
GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
Monolithic LED microdisplay on active matrix substrate using flip-chip technology
ZJ Liu, KM Wong, CW Keung… - IEEE Journal of …, 2009 - ieeexplore.ieee.org
A monolithic high-resolution (individual pixel size 300times300 mum 2) active matrix (AM)
programmed 8times8 micro-LED array was fabricated using flip-chip technology. The …
programmed 8times8 micro-LED array was fabricated using flip-chip technology. The …
Fast UV sensing properties of n-ZnO nanorods/p-GaN heterojunction
Abstract n-type ZnO nanorods are vertically grown over p-type Mg: GaN substrate by simple
hydrothermal process to form a p-GaN/n-ZnO nanorods heterojunction. The heterojunction …
hydrothermal process to form a p-GaN/n-ZnO nanorods heterojunction. The heterojunction …
Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes
The fabrication of ultra-high-resolution micro-displays with low power consumption is
essential for applications in virtual reality and augmented reality systems. In this regard, GaN …
essential for applications in virtual reality and augmented reality systems. In this regard, GaN …
Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide
DS Liu, CS Sheu, CT Lee, CH Lin - Thin Solid Films, 2008 - Elsevier
The thermal stability of indium tin oxide (ITO) films and ITO co-sputtered with zinc oxide
(ZnO) films at different zinc atomic ratios in various atmospheres are investigated. The …
(ZnO) films at different zinc atomic ratios in various atmospheres are investigated. The …
Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes
KW Kim, NJ Choi, KB Kim, M Kim, SN Lee - Journal of Alloys and …, 2016 - Elsevier
We have grown thin films of nonpolar m-plane (10-10) ZnO on a semipolar (11–22) GaN
template by atomic layer deposition (ALD) at low growth temperatures (< 200° C). The …
template by atomic layer deposition (ALD) at low growth temperatures (< 200° C). The …
Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes
We report on the formation of highly transparent and low-resistance Cu-doped indium oxide
(CIO)(3 nm)/indium tin oxide (ITO)(400 nm) ohmic contact to p-type GaN for high-brightness …
(CIO)(3 nm)/indium tin oxide (ITO)(400 nm) ohmic contact to p-type GaN for high-brightness …
The fabrication of a patterned ZnO nanorod array for high brightness LEDs
In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-
emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer …
emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer …
Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching
Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been
investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching …
investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching …