In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

The last 20 years have seen a massive increase in reports on complex oxides with
functional properties synthesized by atomic layer deposition (ALD). Many of these …

This paper will provide a brief overview of the unique multiferroic material Bismuth ferrite
(BFO). Considering that Bismuth ferrite is a unique material which possesses both …

Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …

Atomic layer deposition (ALD) is known as a key enabler of the continuous advances in
device engineering for microelectronics. For instance, the state-of-the-art transistor …

In this study, combinatorial atomic layer deposition (C-ALD) has been used to deposit
layered ZnO and TiO2 nanolaminates on both oxide-covered Si (100) wafers and glass …

Bismuth vanadate (BVO) is a promising metal oxide semiconductor for photoelectrochemical
water oxidation. In this study, BVO was deposited using atomic layer deposition (ALD) of …

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on
planar surfaces and complex structured substrates based on its unique sequential process …

An investigation of the influence of annealing conditions on the carrier transport, leakage
current and dielectric properties of ALD-grown amorphous Bi–Fe–O thin films after their …

Ethylferrocene, a novel precursor for atomic layer deposition (ALD) of iron oxide, was
investigated using an oxygen plasma co-reactant. Iron oxide deposition showed a saturating …