The dynamics of high-density (10 19< 10 21 cm− 3), high-temperature (300< T e< 3000 K)
plasmas, generated in silicon by single 1.06-and 0.53-μm picosecond laser pulses, is …

An investigation of ultrashort pulsed laser–induced surface modification due to conditions
that result in a superheated melted liquid layer and material evaporation are considered. To …

A review of phenomena of optical damage in semiconductor laser materials is presented
with compilation of empirical data, discussion on theoretical explanation and modeling of …

A quantitative analysis of linear temperature-dependent coupled thermoelectronic diffusion
waves in the generation of the laserinduced IR photothermal radiometric signal from a …

The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

High-yield engineering and characterization of cavity–emitter coupling is an outstanding
challenge in develo** scalable quantum network nodes. Ex situ defect formation systems …

Millisecond, nanosecond, and picosecond laser pulse induced damage thresholds on single-
crystal are investigated in this study. The thresholds of laser-induced damage on silicon are …

This text aims at providing a comprehensive and up to date treatment of the new and rapidly
expanding field of laser pro cessing of thin films, particularly, though by no means exclu …

We have used two-photon absorption, self-defocusing, and optically-induced melting in
GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the limiting action from …

The evolution of the morphology and composition of the single-crystal silicon surface
irradiated by infrared and visible nanosecond laser pulses is investigated as a function of …