Luminescent erbium‐doped silicon thin films for advanced anti‐counterfeit labels
The never‐ending struggle against counterfeit demands the constant development of
security labels and their fabrication methods. This study demonstrates a novel type of …
security labels and their fabrication methods. This study demonstrates a novel type of …
Si based optoelectronics for communications
Si based optoelectronic devices have recently successfully entered the market of optical
communications. This fact is stimulating renewed efforts in the design of optoelectronic …
communications. This fact is stimulating renewed efforts in the design of optoelectronic …
Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy
We have fabricated erbium–oxygen‐doped silicon light emitting diodes with molecular beam
epitaxy by simultaneously evaporating erbium and silicon and providing a suitable …
epitaxy by simultaneously evaporating erbium and silicon and providing a suitable …
Effect of O: Er concentration ratio on the structural, electrical, and optical properties of Si: Er: O layers grown by molecular beam epitaxy
The structural, electrical, and optical properties of crystalline Si codoped with Er and O by
molecular beam epitaxy (MBE) have been investigated in detail. Si: Er: O layers (∼ 250 nm …
molecular beam epitaxy (MBE) have been investigated in detail. Si: Er: O layers (∼ 250 nm …
Erbium in silicon
Publisher Summary This chapter describes erbium (Er) in silicon (Si). Silicon is the
dominating material in semiconductor manufacturing. Ninety-five percent of all …
dominating material in semiconductor manufacturing. Ninety-five percent of all …
An alternative experimental approach to produce rare-earth-doped SiOx films
AR Zanatta - Journal of Applied Physics, 2016 - pubs.aip.org
Rare-earth (RE) doped silicon-oxide (SiO x) films were prepared by sputtering a combined
Si+ RE 2 O 3 target with argon ions. The study comprised the neodymium (Nd) and …
Si+ RE 2 O 3 target with argon ions. The study comprised the neodymium (Nd) and …
Growth of Er‐doped silicon using metalorganics by plasma‐enhanced chemical vapor deposition
Epitaxial growth of Er‐doped silicon films has been performed by plasma‐enhanced
chemical vapor deposition at low temperature (430° C) using an electron cyclotron …
chemical vapor deposition at low temperature (430° C) using an electron cyclotron …
Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon
T Dejima, R Saito, S Yugo, H Isshiki… - Journal of applied …, 1998 - pubs.aip.org
Well resolved, sharp photoluminescence (PL) peaks of Er 3+(4f 11) ions at∼ 1.54 μm are
obtained from Er-doped porous silicon (PS: Er) on which a hydrogen plasma treatment is …
obtained from Er-doped porous silicon (PS: Er) on which a hydrogen plasma treatment is …
Photoluminescence of a-Si:H films grown by plasma-enhanced chemical vapor deposition and doped with erbium from the metallorganic compound Er(HFA)3·DME
VB Voronkov, VG Golubev, AV Medvedev… - Physics of the Solid …, 1998 - Springer
Abstract Using standard low-temperature (< 300° C) plasma-enhanced chemical vapor
deposition (PE CVD) technology, films of a Si (Er): H were obtained that emitted light in the …
deposition (PE CVD) technology, films of a Si (Er): H were obtained that emitted light in the …
Редкоземельные элементы в монокристаллическом кремнии
Приведен обзор поведения примесей редкоземельных элементов в
монокристалическом кремнии. Описаны процессы, протекающие при ионном …
монокристалическом кремнии. Описаны процессы, протекающие при ионном …