Improved crystalline quality of AlN by epitaxial lateral overgrowth using two-phase growth method for deep-ultraviolet stimulated emission
X Chen, J Yan, Y Zhang, Y Tian, Y Guo… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
We report on the maskless epitaxial lateral overgrowth (ELOG) of the AlN layer on trench-
patterned AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD) …
patterned AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD) …
An X-ray diffraction and Raman spectroscopy investigation of AlGaN epi-layers with high Al composition
S Wang, X Zhang, Q Dai, ZC Feng, Y Cui - Optik, 2017 - Elsevier
Abstract The Al x Ga 1-x N (0.15≤ x≤ 0.87) epi-layers were grown on c-plane sapphire
substrate by metal organic chemical vapor deposition (MOCVD). Based on a combination of …
substrate by metal organic chemical vapor deposition (MOCVD). Based on a combination of …
A new type of graphene oxide and its application in laser devices
J Bi, Z Wang, Y Cui, J Chang, C Lu - Optical Materials, 2017 - Elsevier
Laser materials are very important in development of efficient laser devices. In this paper, a
new type of graphene oxide (GO) was synthesized for develo** pulse laser devices. The …
new type of graphene oxide (GO) was synthesized for develo** pulse laser devices. The …
[LIBRO][B] Development of Crack-free AlGaN on GaN based on Facet-Controlled Epitaxial Lateral Overgrowth
K Wang - 2020 - search.proquest.com
AlGaN/GaN heterostructures are critical for optoelectronic and electronic devices. However,
once the AlGaN exceeds a critical thickness threshold, cracking occurs, which negatively …
once the AlGaN exceeds a critical thickness threshold, cracking occurs, which negatively …