Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

The structural and optical properties of three different kinds of GaAs nanowires with 100%
zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety …

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are
addressed. The axial and radial growth rates as a function of the Ga rate and As pressure …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

Continued development of high-efficiency multi-junction solar cells requires growth of lattice-
mismatched materials. Today, the need for lattice matching both restricts the bandgap …

Polarization-dependent Raman scattering experiments realized on single GaAs nanowires
with different percentages of zinc-blende and wurtzite structure are presented. The selection …

The effect of surfaces on the optical properties of GaAs nanowires is evidenced by
comparing nanowires with or without an AlGaAs cap** shell as a function of the diameter …