[HTML][HTML] Status and prospects of plasma-assisted atomic layer deposition
Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …
devices for computing and data storage, but also for emerging technologies such as related …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J **ang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …
High-mobility GaSb nanostructures cointegrated with InAs on Si
GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors
and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor …
and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor …
InGaAs-on-insulator FinFETs with reduced off-current and record performance
In this work, we demonstrate InGaAs-on-lnsulator FinFETs on silicon with optimized on/off
trade-off showing record performance. This is achieved by using carefully designed …
trade-off showing record performance. This is achieved by using carefully designed …
Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
GB Rayner, N O'Toole, J Shallenberger… - Journal of Vacuum …, 2020 - pubs.aip.org
Ultrahigh purity (UHP) reactor conditions provide a process environment for growth of nitride
thin films with low oxygen content by plasma-enhanced atomic layer deposition (PEALD). In …
thin films with low oxygen content by plasma-enhanced atomic layer deposition (PEALD). In …
Three-dimensional monolithic integration of III–V and Si (Ge) FETs for hybrid CMOS and beyond
V Deshpande, V Djara, E O'Connor… - Japanese Journal of …, 2017 - iopscience.iop.org
Abstract Three-dimensional (3D) monolithic integration can enable higher density and has
the potential to stack independently optimized layers at transistor level. Owing to high …
the potential to stack independently optimized layers at transistor level. Owing to high …
InGaAs FinFETs 3-D sequentially integrated on FDSOI Si CMOS with record performance
C Convertino, CB Zota, D Caimi… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
QH Luc, KS Yang, JW Lin, CC Chang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter presents a remote NH 3/N 2 plasma treatment after gate oxide deposition for
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current
In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …