Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

I Ahmed, U Rawat, JT Chen… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a comprehensive study of the performance of Sezawa surface acoustic
wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching …

Band pass filters based on GaN/Si lumped-element SAW resonators operating at frequencies above 5 GHz

D Neculoiu, AC Bunea, AM Dinescu, LA Farhat - IEEE Access, 2018 - ieeexplore.ieee.org
This paper reports on a GaN/Si surface acoustic wave (SAW) impedance element filter
operating in the few gigahertz region. The PI-type filter consists of three SAW resonators with …

Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor

G Yu, R Liang, H Zhao, L **ao, J Cui, Y Zhao… - Science China …, 2024 - Springer
Surface acoustic wave (SAW) resonators with an ultrahigh Q-factor are designed and
fabricated on silicon-based gallium nitride (GaN/Si). The temperature-dependent …

Gallium Nitride (GaN) MEMS Lamb Wave Resonators Operating At High Temperature Up To 800° C

W Sui, M Sheplak, PXL Feng - 2024 IEEE 37th International …, 2024 - ieeexplore.ieee.org
We report on the first experimental demonstration of gallium nitride microelectromechanical
Lamb wave resonators operating at high temperature up to 800° C, while retaining robust …

[PDF][PDF] Effect of key technological parameters on GaN/Si SAW resonators operating above 5 GHz

AC Bunea, AM Dinescu, LA Farhat… - Romanian Journal of …, 2017 - researchgate.net
This paper presents the experimental investigation results of the technological dispersion
effect on the response of Surface Acoustic Wave Resonators (SAW-R) fabricated on GaN/Si …

Characterization of 3-port SAW diplexers using 2-port VNA measurements

AC Bunea, D Neculoiu… - 2022 International …, 2022 - ieeexplore.ieee.org
A simple approach to the on-wafer characterization of 3-port surface acoustic wave (SAW)
diplexers using S-to Z-parameter conversion is proposed. The concept is first tested on a …

[PDF][PDF] Recent developments in microwave filters based on GaN/Si SAW resonators, operating at frequencies above 5 GHz

AC Bunea, D Neculoiu, A Dinescu… - … : ESA SPCD 2018 …, 2018 - passive-components.eu
This communication presents the progress in the development of monolithic integrated band
pass filters, achieved in the frame of the ESA project No. 40000115202/15/NL/CBi …

[PDF][PDF] Band Pass Filters Based on GaN/Si Lumped-Element SAW Resonators Operating at Frequencies Above 5 GHz

AM DINESCU, L FARHAT - researchgate.net
This paper reports on a GaN/Si surface acoustic wave (SAW) impedance element filter
operating in the few gigahertz region. The PI-type filter consists of three SAW resonators with …

Wafer Level Packaging of GaN/Si SAW Band Pass Filters with Operating Frequencies Above 5 GHz

AC Bunea, D Neculoiu… - 2018 International …, 2018 - ieeexplore.ieee.org
This paper proposes a quasi-wafer level packaging approach of surface acoustic wave band
pass filters (SAW-BPF) with operating frequencies above 5 GHz. A Poly (methyl …