(57) ABSTRACT A yellow Light Emitting Diode (LED) with a peak emission wavelength in
the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based …

The present invention is directed to display technologies. More specifically, various
embodiments of the present inven tion provide projection display systems where one or …

(57) ABSTRACT A light emitting diode device has a gallium and nitrogen containing
Substrate with a surface region with an epitaxial layer overlying the surface region …

6,498,050 B2 12/2002 Fujimoto 6,518,077 B2 2/2003 Narayan et al. 6,605,486 B2 8/2003
Fujimoto 6,759,139 B2 7/2004 Kunisato et al. 6,844,084 B2* 1/2005 Kokta et al …

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(52)(57) A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower
threshold current density and longer stimulated emission wavelength, compared to …

ABSTRACT A packaged light emitting device. The device has a Substrate member
comprising a surface region. The device also has two or more light emitting diode devices …

US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …

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et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …