(57) ABSTRACT A method for selectively etching a silicon nitride layer on a substrate
includes arranging a substrate on a substrate sup port of a substrate processing chamber …

A chamber member of a plasma source is provided and includes a sidewall, a transition
member, a top wall and an injector connecting member. The sidewall is cylindrically shaped …

A substrate support includes an inner portion arranged to support a substrate, an edge ring
surrounding the inner portion, and a controller that calculates a desired pocket depth of the …

(57) ABSTRACT A substrate support includes an inner portion arranged to support a
substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer …

(57) ABSTRACT A system is provided and includes a substrate processing chamber, one or
more injectors, and a controller. The one or more injectors inject an electronegative gas, a …

(57) ABSTRACT A gas delivery system for a substrate processing system includes a first
manifold and a second manifold. A gas delivery sub-system selectively delivers gases from …

A substrate support in a substrate processing system includes an inner portion and an outer
portion. The inner portion is positioned below a gas distribution device configured to direct …

A gas injector for a substrate processing system includes a first injector housing including a
base portion defining a first gas flow channel; a projecting portion extending from the base …

An apparatus for dividing and Supplying gas is provided with a flow rate control device, a
plurality of divided flow passages of gas flowing from the flow rate control device, thermal …

(57) ABSTRACT A pharmaceutical composition for oral administration is disclosed herein,
comprising a therapeutically active agent, SNAC and at least one antacid compound …